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| BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS Copyright (c) 1997, Power Innovations Limited, UK AUGUST 1993 - REVISED MARCH 1997 q Designed for Complementary Use with BD896A, BD898A and BD900A 70 W at 25C Case Temperature 8 A Continuous Collector Current Minimum hFE of 750 at 3V, 3A B C E q q q TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING BD895A Collector-base voltage (IE = 0) BD897A BD899A BD895A Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at (or below) 25C case temperature (see Note 1) Continuous device dissipation at (or below) 25C free air temperature (see Note 2) Operating free-air temperature range Operating junction temperature range Storage temperature range NOTES: 1. Derate linearly to 150C case temperature at the rate of 0.56 W/C. 2. Derate linearly to 150C free air temperature at the rate of 16 mW/C. BD897A BD899A V EBO IC IB Ptot Ptot TA Tj Tstg VCEO VCBO SYMBOL VALUE 45 60 80 45 60 80 5 8 0.3 70 2 -65 to +150 -65 to +150 -65 to +150 V A A W W C C C V V UNIT PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS AUGUST 1993 - REVISED MARCH 1997 electrical characteristics at 25C case temperature (unless otherwise noted) PARAMETER V (BR)CEO Collector-emitter breakdown voltage Collector-emitter cut-off current IC = 100 mA VCE = 30 V V CE = 30 V V CE = 40 V VCB = 45 V V CB = 60 V ICBO Collector cut-off current V CB = 80 V V CB = 45 V V CB = 60 V V CB = 80 V IEBO hFE VCE(sat) VBE(on) VEC Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Parallel diode forward voltage VEB = VCE = IB = VCE = IE = 5V 3V 16 mA 3V 8A IB = 0 IB = 0 IB = 0 IB = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IC = 0 IC = 4 A IC = 4 A IC = 4 A IB = 0 TC = 100C TC = 100C TC = 100C (see Notes 3 and 4) (see Notes 3 and 4) (see Notes 3 and 4) (see Notes 3 and 4) 750 2.8 2.5 3.5 V V V TEST CONDITIONS BD895A (see Note 3) BD897A BD899A BD895A BD897A BD899A BD895A BD897A BD899A BD895A BD897A BD899A MIN 45 60 80 0.5 0.5 0.5 0.2 0.2 0.2 2 2 2 2 mA mA mA V TYP MAX UNIT ICEO NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RJC RJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 1.79 62.5 UNIT C/W C/W resistive-load-switching characteristics at 25C case temperature PARAMETER ton toff TEST CONDITIONS IC = 3 A V BE(off) = -3.5 V IB(on) = 12 mA RL = 10 MIN IB(off) = -12 mA tp = 20 s, dc 2% TYP 1 5 MAX UNIT s s Turn-on time Turn-off time Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. PRODUCT INFORMATION 2 BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS AUGUST 1993 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V 50000 TCS130AD COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT 2*0 tp = 300 s, duty cycle < 2% IB = IC / 100 TCS130AB hFE - Typical DC Current Gain TC = -40C TC = 25C TC = 100C 10000 1*5 1000 1*0 VCE = 3 V t p = 300 s, duty cycle < 2% 100 0*5 1*0 IC - Collector Current - A 10 TC = -40C TC = 25C TC = 100C 0*5 0*5 1*0 IC - Collector Current - A 10 Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT 3*0 VBE(sat) - Base-Emitter Saturation Voltage - V TC = -40C TC = 25C TC = 100C TCS130AC 2*5 2*0 1*5 1*0 IB = IC / 100 tp = 300 s, duty cycle < 2% 0*5 0*5 1*0 IC - Collector Current - A 10 Figure 3. PRODUCT INFORMATION 3 BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS AUGUST 1993 - REVISED MARCH 1997 MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA 10 SAS130AE IC - Collector Current - A 1*0 0*1 0.01 1*0 BD895A BD897A BD899A 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE 80 Ptot - Maximum Power Dissipation - W 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - C TIS130AB Figure 5. PRODUCT INFORMATION 4 BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS AUGUST 1993 - REVISED MARCH 1997 MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 o 3,96 3,71 10,4 10,0 2,95 2,54 6,6 6,0 15,90 14,55 1,32 1,23 see Note B see Note C 6,1 3,5 0,97 0,61 1 2 3 1,70 1,07 14,1 12,7 2,74 2,34 5,28 4,88 2,90 2,40 0,64 0,41 VERSION 1 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE PRODUCT INFORMATION 5 BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS AUGUST 1993 - REVISED MARCH 1997 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright (c) 1997, Power Innovations Limited PRODUCT INFORMATION 6 |
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